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Vishay Intertechnology Electronic Components Datasheet

VS-1EFH02HM3 Datasheet

Hyperfast Rectifier

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VS-1EFH02HM3 pdf
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VS-1EFH02HM3
Vishay Semiconductors
Hyperfast Rectifier, 1 A FRED Pt®
DO-219AB (SMF)
Cathode
Anode
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF (typ. 125 °C)
trr
TJ max.
Diode variation
DO-219AB (SMF)
1A
200 V
0.74 V
25 ns
175 °C
Single die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop and
hyperfast recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber boost,
lighting, piezo-injection, as high frequency rectifiers, and
freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
Non-repetitive peak surge current
IFSM
Operating junction and storage temperature range TJ, TStg
Note
(1) Device on PCB with 8 mm x 16 mm soldering lands
TEST CONDITIONS
TC = 160 °C (1)
TJ = 25 °C
VALUES
200
1
35
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR, VR IR = 100 μA
200
Forward voltage
IF = 1 A
VF
IF = 1 A, TJ = 125 °C
-
-
Reverse leakage current
VR = VR rated
IR
TJ = 125 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 200 V
-
TYP.
-
0.87
0.74
-
0.5
5
MAX.
-
0.93
0.8
2
8
-
UNITS
V
μA
pF
Revision: 25-Jun-15
1 Document Number: 95786
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-1EFH02HM3 Datasheet

Hyperfast Rectifier

No Preview Available !

VS-1EFH02HM3 pdf
www.vishay.com
VS-1EFH02HM3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 1 A
dIF/dt = 200 A/μs
VR = 160 V
TJ = 125 °C
-
-
-
-
-
-
-
-
TYP.
24
-
16
23
1.6
2.5
13
30
MAX.
-
25
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance, junction to case
TJ, TStg
RthJC
Device mounted on PCB with 8 mm x 16 mm
soldering lands
Thermal resistance, junction to ambient
RthJA
Device mounted on PCB with 2 mm x 3.5 mm
soldering lands
Approximate weight
Marking device
Case style SMF (DO-219AB)
MIN.
-65
-
-
TYP. MAX. UNITS
- +175 °C
- 17 °C/W
- 140
0.015
0.0005
MDH
°C/W
g
oz.
100
10 TJ = 175 °C
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
175 °C
10 150 °C
1 125 °C
0.1
0.01
25 °C
0.001
0
50 100 150 200
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 25-Jun-15
2 Document Number: 95786
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-1EFH02HM3
Description Hyperfast Rectifier
Maker Vishay
Total Page 6 Pages
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