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Vishay Intertechnology Electronic Components Datasheet

VS-20MQ040-M3 Datasheet

Schottky Rectifier

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VS-20MQ040-M3
Vishay Semiconductors
Schottky Rectifier, 2 A
Cathode
Anode
DO-214AC (SMA)
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
DO-214AC (SMA)
2A
40 V
0.63 V
26 mA at 125 °C
150 °C
Single die
3.0 mJ
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Halogen-free according to IEC 61249-2-21
definition
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-20MQ040-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
tp = 5 μs sine
VF 2 Apk, TJ = 125 °C
TJ Range
VALUES
2
40
120
0.63
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-20MQ040-M3
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
IFSM
EAS
IAR
TEST CONDITIONS
VALUES
50 % duty cycle at TC = 110 °C, rectangular waveform
On PC board 9 mm2 island (0.013 mm thick copper pad area)
2.1
50 % duty cycle at TC = 112 °C, rectangular waveform
On PC board 9 mm2 island (0.013 mm thick copper pad area)
2
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
120
30
TJ = 25 °C, IAS = 1 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3
1.0
UNITS
A
A
mJ
A
Revision: 12-Oct-11
1 Document Number: 93370
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-20MQ040-M3 Datasheet

Schottky Rectifier

No Preview Available !

www.vishay.com
VS-20MQ040-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
VF(TO)
rt
CT
LS
dV/dt
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
2A
1.5 A
1A
2A
1.5 A
1A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.69
0.62
0.54
0.63
0.56
0.49
0.5
26
0.36
104
38
2.0
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
Approximate weight
Marking device
Case style SMA (similar D-64)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES
- 55 to 150
UNITS
°C
80 °C/W
0.07
0.002
2F
g
oz.
Revision: 12-Oct-11
2 Document Number: 93370
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-20MQ040-M3
Description Schottky Rectifier
Maker Vishay
Total Page 6 Pages
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