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Vishay Intertechnology Electronic Components Datasheet

VS-25F100 Datasheet

Standard Recovery Diodes

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VS-25F(R) Series
Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 25 A
DO-203AA (DO-4)
PRODUCT SUMMARY
IF(AV)
Package
Circuit configuration
25 A
DO-203AA (DO-4)
Single diode
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V VRRM
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Battery charges
• Converters
• Power supplies
• Machine tool controls
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
IF(RMS)
IFSM
I2t
VRRM
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Range
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VS-25F(R)
10
20
40
60
80
100
120
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
100
200
400
600
800
1000
1200
VALUES
25
120
40
356
373
636
580
100 to 1200
-65 to +175
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
150
275
500
725
950
1200
1400
UNITS
A
°C
A
A
A2s
V
°C
IRRM MAXIMUM
AT TJ = 175 °C
mA
12
Revision: 16-Nov-15
1 Document Number: 93506
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-25F100 Datasheet

Standard Recovery Diodes

No Preview Available !

www.vishay.com
VS-25F(R) Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
IF(AV)
Maximum RMS forward current
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I2t
VF(TO)1
VF(TO)2
rf1
rf2
VFM
TEST CONDITIONS
180° conduction, half sine wave
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
Ipk = 78 A, TJ = 25 °C, tp = 400 μs rectangular wave
VALUES
25
120
40
356
373
300
314
636
580
450
410
6360
0.80
0.90
6.80
5.70
1.30
UNITS
A
°C
A
A
A2s
A2s
V
m
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
TJ
Maximum storage temperature
range
TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
Maximum thermal resistance,
case to heat sink
RthCS Mounting surface, smooth, flat and greased
Allowable mounting torque
Not lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
-65 to +175
-65 to +200
UNITS
°C
1.5
K/W
0.5
1.5 + 0 - 10 %
(13)
N·m
(lbf · in)
1.2 + 0 - 10 %
(10)
N·m
(lbf · in)
7g
0.25 oz.
DO-203AA (DO-4)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION
180°
0.28
120°
0.39
90° 0.50
60° 0.73
30° 1.20
RECTANGULAR CONDUCTION
0.24
0.41
0.54
0.75
1.21
TEST CONDITIONS
TJ = TJ maximum
UNITS
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 16-Nov-15
2 Document Number: 93506
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-25F100
Description Standard Recovery Diodes
Maker Vishay
Total Page 6 Pages
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