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Vishay Intertechnology Electronic Components Datasheet

VS-25TTS08FP-M3 Datasheet

Thyristor

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www.vishay.com
VS-25TTS08FP-M3, VS-25TTS12FP-M3
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 25 A
2
(A)
1
2
3
3L TO-220 FullPAK
1 (K) (G) 3
PRIMARY CHARACTERISTICS
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
Package
16 A
800 V, 1200 V
1.25 V
45 mA
-40 °C to 125 °C
3L TO-220 FullPAK
Circuit configuration
Single SCR
FEATURES
• Designed and qualified for industrial level
• Fully isolated package (VINS = 2500 VRMS)
• UL pending
• 125 °C max. operating junction temperature
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding, and battery
charge
DESCRIPTION
The VS-25TTS...FP... high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter TA = 55 °C,
TJ = 125 °C, common heatsink
18
of 1 °C/W
THREE-PHASE BRIDGE
22
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IRMS
VRRM/VDRM
ITSM
VT
dV/dt
Sinusoidal waveform
16 A, TJ = 25 °C
dI/dt
TJ
VOLTAGE RATINGS
PART NUMBER
VS-25TTS08FP-M3
VS-25TTS12FP-M3
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
VALUES
16
25
800, 1200
350
1.25
500
150
-40 to +125
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
UNITS
A
UNITS
A
V
A
V
V/μs
A/μs
°C
IRRM/IDRM
AT 125 °C
mA
10
Revision: 09-Jan-18
1
Document Number: 96300
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-25TTS08FP-M3 Datasheet

Thyristor

No Preview Available !

www.vishay.com
VS-25TTS08FP-M3, VS-25TTS12FP-M3
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
IT(AV)
IRMS
ITSM
Maximum I2t for fusing
Maximum I2t for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
I2t
I2t
VTM
rt
VT(TO)
IRM/IDM
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
IH
IL
dV/dt
dI/dt
TEST CONDITIONS
TC = 51 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1ms to 10 ms, no voltage reapplied
16 A, TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VRRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A,
TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
TJ = TJ max., linear to 80 %, VDRM = Rg - k = Open
VALUES
UNITS
TYP. MAX.
16
25
A
300
350
450
A2s
630
6300
A2s
1.25
V
12.0
m
1.0
V
0.5
10
mA
- 150
200
500
V/μs
150
A/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
PGM
PG(AV)
+ IGM
- VGM
Maximum required DC gate current to trigger
IGT
Maximum required DC gate
voltage to trigger
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
TEST CONDITIONS
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
TJ = 125 °C, VDRM = Rated value
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
UNITS
W
A
V
mA
V
mA
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
tgt
trr
tq
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
UNITS
µs
Revision: 09-Jan-18
2
Document Number: 96300
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-25TTS08FP-M3
Description Thyristor
Maker Vishay
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