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Vishay Intertechnology Electronic Components Datasheet

VS-30CTQ080-1-M3 Datasheet

High Performance Schottky Rectifier

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www.vishay.com
VS-30CTQ...S-M3, VS-30CTQ...-1-M3 Series
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
D2PAK
TO-262
Base
common
cathode
2
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
VS-30CTQ...S-M3
2
1 Common 3
Anode cathode Anode
VS-30CTQ...-1-M3
PRODUCT SUMMARY
IF(AV)
VR
VF at IF
IRM
TJ max.
EAS
Package
2 x 15 A
80 V, 100 V
0.67 V
7.0 mA at 125 °C
175 °C
7.5 mJ
TO-263AB (D2PAK), TO-262AA
Diode variation
Common cathode
FEATURES
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
15 Apk, TJ = 125 °C (per leg)
Range
VALUES
30
80/100
850
0.67
-55 to 175
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-30CTQ080S-M3 VS-30CTQ100S-M3
VS-30CTQ080-1-M3 VS-30CTQ100-1-M3
80 100
UNITS
A
V
A
V
°C
UNITS
V
Revision: 26-Feb-14
1 Document Number: 94938
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-30CTQ080-1-M3 Datasheet

High Performance Schottky Rectifier

No Preview Available !

www.vishay.com
VS-30CTQ...S-M3, VS-30CTQ...-1-M3 Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per device
per leg
IF(AV)
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 129 °C, rectangular waveform
VALUES
30
15
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
850
275
7.50
0.50
UNITS
A
mJ
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
CT
LS
dV/dt
TEST CONDITIONS
15 A
30 A
TJ = 25 °C
15 A
30 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.86
1.05
0.67
0.82
0.55
7.0
500
8.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
RthJC
DC operation
Typical thermal resistance,
case to heatsink
RthCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style D2PAK
Case style TO-262
VALUES
-55 to 175
UNITS
°C
3.25
°C/W
1.63
0.50
2g
0.07 oz.
6 (5)
12 (10)
kgf cm
(lbf in)
30CTQ080S
30CTQ100S
30CTQ080-1
30CTQ100-1
Revision: 26-Feb-14
2 Document Number: 94938
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-30CTQ080-1-M3
Description High Performance Schottky Rectifier
Maker Vishay
Total Page 8 Pages
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