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VS-30CTQ080-1-M3 - High Performance Schottky Rectifier

Download the VS-30CTQ080-1-M3 datasheet PDF. This datasheet also covers the VS-30CTQ080S-M3 variant, as both devices belong to the same high performance schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Description

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Features

  • 175 °C TJ operation.
  • Center tap configuration.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: For definit.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VS-30CTQ080S-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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VS-3S POWER RELAY Fujitsu
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Other Datasheets by Vishay

Part Number Description
VS-30CTQ080-1PbF High Performance Schottky Rectifier
VS-30CTQ080-N3 Schottky Rectifier
VS-30CTQ080HN3 Schottky Rectifier
VS-30CTQ080PbF Schottky Rectifier
VS-30CTQ080S-M3 High Performance Schottky Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com VS-30CTQ...S-M3, VS-30CTQ...-1-M3 Series Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A D2PAK TO-262 Base common cathode 2 Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-30CTQ...S-M3 2 1 Common 3 Anode cathode Anode VS-30CTQ...-1-M3 PRODUCT SUMMARY IF(AV) VR VF at IF IRM TJ max. EAS Package 2 x 15 A 80 V, 100 V 0.67 V 7.0 mA at 125 °C 175 °C 7.
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