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VS-30CTQ...HN3 Series
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base 2
common
cathode
1 23
TO-220AB
Anode
2 Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-220AB
2 x 15 A
80 V, 100 V
0.67 V
7.0 mA at 125 °C
175 °C
Common cathode
7.50 mJ
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
Available
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 15 Apk, TJ = 125 °C (per leg)
TJ Range
VALUES
30
80/100
850
0.67
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-30CTQ080HN3
80
VS-30CTQ100HN3
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum average forward current per device
See fig. 5
per leg
IF(AV)
50 % duty cycle at TC = 129 °C, rectangular waveform
30
15
A
Maximum peak one cycle non-repetitive surge
current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
5 µs sine or 3 µs rect. pulse Following any rated load 850
IFSM condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
275
EAS TJ = 25 °C, IAS = 0.50 A, L = 60 mH
7.50
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.50
A
mJ
A
Revision: 30-Sep-13
1 Document Number: 94850
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
