900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

VS-43CTQ100-1-M3 Datasheet

High Performance Schottky Rectifier

No Preview Available !

www.vishay.com
VS-43CTQ...S-M3, VS-43CTQ...-1-M3 Series
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
D2PAK
TO-262
Base
common
cathode
2
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
VS-43CTQ...S-M3
2
1 Common 3
Anode cathode Anode
VS-43CTQ...-1-M3
PRODUCT SUMMARY
IF(AV)
2 x 20 A
VR 80 V, 100 V
VF at IF
IRM max.
0.67 V
11 mA at 125 °C
TJ max.
175 °C
EAS
Package
7.50 mJ
TO-263AB (D2 PAK), TO-262AA
Diode variation
Common cathode
FEATURES
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, freewheeling diodes, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 20 Apk, TJ = 125 °C (per leg)
TJ Range
VALUES
40
80/100
850
0.67
-55 to 175
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-43CTQ080S-M3
VS-43CTQ080-1-M3
80
VS-43CTQ100S-M3
VS-43CTQ100-1-M3
100
UNITS
A
V
A
V
°C
UNITS
V
Revision: 28-Feb-14
1 Document Number: 94942
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-43CTQ100-1-M3 Datasheet

High Performance Schottky Rectifier

No Preview Available !

www.vishay.com
VS-43CTQ...S-M3, VS-43CTQ...-1-M3 Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
per device
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
SYMBOL
IF(AV)
IFSM
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 135 °C, rectangular waveform
VALUES
20
40
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
850
275
7.50
0.50
UNITS
A
mJ
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
Maximum reverse leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
VF(TO)
rt
CT
LS
dV/dt
20 A
40 A
20 A
40 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.81
0.98
0.67
0.81
1
11
0.71
0.43
1480
8.0
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
TJ, TStg
RthJC
DC operation
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style D2PAK
Case style TO-262
VALUES UNITS
-55 to 175 °C
2.0
1.0 °C/W
0.50
2g
0.07 oz.
6 (5)
12 (10)
kgf cm
(lbf in)
43CTQ080S
43CTQ100S
43CTQ080-1
43CTQ100-1
Revision: 28-Feb-14
2 Document Number: 94942
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-43CTQ100-1-M3
Description High Performance Schottky Rectifier
Maker Vishay
Total Page 8 Pages
PDF Download

VS-43CTQ100-1-M3 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 VS-43CTQ100-1-M3 High Performance Schottky Rectifier
Vishay





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy