VS-50MT060WHTAPbF Description
VS-50MT060WHTAPbF Vishay Semiconductors “Half Bridge” IGBT MTP (Warp Speed IGBT), 114 A MTP PRIMARY CHARACTERISTICS VCES VCE(on) typical at VGE = 15 V IC at TC = 25 °C Speed 600 V 2.3 V 114 A 30 kHz to 100 kHz Package MTP Circuit configuration Half bridge.
VS-50MT060WHTAPbF Key Features
- Gen 4 warp speed IGBT technology
- HEXFRED® antiparallel diodes with ultrasoft
- Very low conduction and switching losses
- Optional SMD thermistor (NTC)
- Very low junction to case thermal resistance
- UL approved file E78996
- Designed and qualified for industrial level
- Material categorization: for definitions of pliance
- Optimized for welding, UPS and SMPS