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Vishay Intertechnology Electronic Components Datasheet

VS-50WQ04FNPbF Datasheet

Schottky Rectifier

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VS-50WQ04FNPbF
Vishay Semiconductors
Schottky Rectifier, 5.5 A
Base
cathode
4, 2
D-PAK (TO-252AA)
1
Anode
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
D-PAK (TO-252AA)
5.5 A
40 V
See Electrical table
40 mA at 125 °C
150 °C
Single die
9 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 5 Apk, TJ = 125 °C
TJ Range
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-50WQ04FNPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
VALUES
5.5
40
340
0.44
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-50WQ04FNPbF
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 135 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1.5 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES UNITS
5.5
550 A
90
9 mJ
1.2 A
Document Number: 94233 For technical questions within your region, please contact one of the following:
Revision: 14-Jan-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

VS-50WQ04FNPbF Datasheet

Schottky Rectifier

No Preview Available !

VS-50WQ04FNPbF
Vishay Semiconductors
Schottky Rectifier, 5.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
Thereshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
VF(TO)
rt
CT
LS
5A
10 A
5A
10 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ =TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
VALUES
0.51
0.63
0.44
0.59
3
40
0.27
26.77
405
5.0
UNITS
V
mA
V
m
pF
nH
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
TEST CONDITIONS
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES UNITS
- 40 to 150 °C
3.0 °C/W
0.3 g
0.01 oz.
50WQ04FN
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94233
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 14-Jan-11


Part Number VS-50WQ04FNPbF
Description Schottky Rectifier
Maker Vishay
Total Page 7 Pages
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