VS-6CUT04 - high performance Schottky diode

Features

175 °C high performance Schottky diode.
Very low forward voltage drop.
Extremely low reverse leakage.
Optimized VF vs. IR trade off for high efficiency.
Increased ruggedness for reverse avalanche capability.
RBSOA available.
Negligible switching losses.
Submicron trench technology.
Compliant to RoHS Directive 2002/95/EC.

Vishay

Datasheet Details

Part number	VS-6CUT04
Manufacturer	Vishay
File Size	134.76 KB
Description	high performance Schottky diode
Datasheet	VS-6CUT04 Datasheet
Additional preview pages of the VS-6CUT04 datasheet.

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Full PDF Text Transcription

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www.vishay.com VS-6CUT04, VS-6CWT04FN Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A I-PAK (TO-251AA) Base common cathode 4 D-PAK (TO-252AA) Base common cathode 4 13 Anode 2 Anode Common cathode VS-6CUT04 2 1 Common 3 Anode cathode Anode VS-6CWT04FN PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS D-PAK (TO-252AA), I-PAK (TO-251AA) 2x3A 45 V 0.54 V 3 mA at 125 °C 175 °C Common cathode 14 mJ FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs.

Published: Apr 4, 2016 |