900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

VS-80CNQ035APbF Datasheet

High Performance Schottky Rectifier

No Preview Available !

VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, New Generation 3,
D-61 Package, 2 x 40 A
VS-80CNQ...APbF
D-61-8
VS-80CNQ...ASMPbF
Base
common
cathode
12
Anode Common
1 cathode
3
Anode
2
D-61-8-SM
VS-80CNQ...ASLPbF
12
Anode Common
1 cathode
3
Anode
2
Base
common
cathode
D-61-8-SL
1
Anode
1
3
Anode
2
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
D-61
2 x 40 A
35 V, 40 V, 45 V
0.51 V
250 mA at 125 °C
150 °C
Common cathode
54 mJ
FEATURES
• 150 °C TJ operation
• Center tap module
• Very low forward voltage drop
• High frequency operation
• High power discrete
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• New fully transfer-mould low profile, small footprint, high
current package
• Through-hole versions are currently available for use in
lead (Pb)-free applications (“PbF” suffix)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The center tap Schottky rectifier module series has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
Range
tp = 5 μs sine
40 Apk, TJ = 125 °C (per leg)
Range
VALUES
80
35 to 45
5800
0.47
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-80CNQ035APbF
35
VS-80CNQ040APbF
40
VS-80CNQ045APbF
45
UNITS
V
Revision: 09-Dec-14
1 Document Number: 94255
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-80CNQ035APbF Datasheet

High Performance Schottky Rectifier

No Preview Available !

VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per leg
per device
IF(AV)
TEST CONDITIONS
50 % duty cycle at TC = 114 °C, rectangular waveform
VALUES
40
80
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
5 μs sine or 3 μs rect. pulse Following any rated
5800
IFSM load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
750
EAS TJ = 25 °C, IAS = 8 A, L = 1.7 mH
54
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
8
UNITS
A
mJ
A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop per leg
See fig. 1
Maximum reverse leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
SYMBOL
VFM (1)
IRM (1)
VF(TO)
rt
CT
LS
dV/dt
40 A
80 A
40 A
80 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.52
0.66
0.47
0.61
5
250
0.26
3.93
2600
5.5
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance, per leg
junction to case
per package
RthJC
DC operation (see fig. 4)
DC operation
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
Device flatness < 5 mils
Approximate weight
Mounting torque
minimum
maximum
Case style D-61
Marking device
Case style D-61-8-SM
Case style D-61-8-SL
VALUES UNITS
-55 to +150 °C
0.85
0.42 °C/W
0.30
7.8 g
0.28 oz.
40 (35)
58 (50)
kgf · cm
(lbf · in)
80CNQ035A
80CNQ040A
80CNQ045A
80CNQ035ASM
80CNQ040ASM
80CNQ045ASM
80CNQ035ASL
80CNQ040ASL
80CNQ045ASL
Revision: 09-Dec-14
2 Document Number: 94255
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-80CNQ035APbF
Description High Performance Schottky Rectifier
Maker Vishay
Total Page 9 Pages
PDF Download

VS-80CNQ035APbF Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 VS-80CNQ035APbF High Performance Schottky Rectifier
Vishay





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy