VS-8ETH03-1-M3 Datasheet | Vishay

FEATURES - Hyperfast recovery time - Low forward voltage drop - Low leakage current - 175 °C operating junction temperature - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION / APPLICATIONS Vishay Semiconductors 300 V series are the state of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time.  The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.  These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives.  Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.    ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak reverse voltage Average rectified forward current Non-repetitive peak surge current Operating junction and storage temperatures SYMBOL VRRM IF(AV) IFSM TJ, TStg TEST CONDITIONS TC = 155 °C TC = 25 °C MAX. 300 8 100 -65 to +175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. Breakdown voltage, blocking voltage VBR, VR IR = 100 μA IF = 8 A - Forward voltage IF = 8 A, TJ = 125 °C - VR = VR rated - Reverse leakage current TJ = 125 °C, VR = VR rated - Junction capacitance VR = 300 V - Series...