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Vishay Intertechnology Electronic Components Datasheet

VS-8ETH03S-M3 Datasheet

Hyperfast Rectifier

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www.vishay.com
VS-8ETH03S-M3, VS-8ETH03-1-M3
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
2
1
3
1
2
D2PAK (TO-263AB)
3
Base
cathode
2
TO-262AA
2
1
3
N/C
Anode
VS-8ETH03S-M3
1
N/C
3
Anode
VS-8ETH03-1-M3
PRIMARY CHARACTERISTICS
IF(AV)
8A
VR
300 V
VF at IF
0.83 V
trr
35 ns
TJ max.
Package
175 °C
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Single
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Vishay Semiconductors 300 V series are the state of the art
hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop and hyperfast
recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
TJ, TStg
TEST CONDITIONS
TC = 155 °C
TC = 25 °C
MAX.
300
8
100
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
300
IF = 8 A
-
Forward voltage
VF
IF = 8 A, TJ = 125 °C
-
VR = VR rated
-
Reverse leakage current
IR
TJ = 125 °C, VR = VR rated
-
Junction capacitance
CT
VR = 300 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
1.0
0.83
0.02
6.0
31
8
MAX.
-
1.25
1.00
20
200
-
-
UNITS
V
μA
pF
nH
Revision: 24-Oct-17
1
Document Number: 96238
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-8ETH03S-M3 Datasheet

Hyperfast Rectifier

No Preview Available !

www.vishay.com
VS-8ETH03S-M3, VS-8ETH03-1-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
IF = 1 A, dIF/dt = - 50 A/μs, VR = 30 V
-
-
Reverse recovery time
trr
TJ = 25 °C
-
27
Peak recovery current
Reverse recovery charge
TJ = 125 °C
-
40
IRRM
TJ = 25 °C
IF = 8 A
-
2.2
dIF/dt = - 200 A/μs
TJ = 125 °C
VR = 200 V
-
5.3
TJ = 25 °C
Qrr
TJ = 125 °C
-
30
-
106
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
TJ, TStg
RthJC
RthJA
RthCS
Typical socket mount
Mounting surface, flat, smooth, and
greased
Weight
Mounting torque
Marking device
Case style D2PAK (TO-263AB)
Case style TO-262
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
175
UNITS
°C
1.45
2.5
-
70
°C/W
0.2
-
2.0
-
0.07
-
12
-
(10)
8ETH03S
8ETH03-1
g
oz.
kgf · cm
(lbf · in)
100
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
100
10
1
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0.001
0
50 100 150 200 250 300
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 24-Oct-17
2
Document Number: 96238
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Part Number VS-8ETH03S-M3
Description Hyperfast Rectifier
Maker Vishay
Total Page 3 Pages
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