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VS-8ETH06SHM3, VS-8ETH06-1HM3
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
TO-263AB (D2PAK)
Base
cathode
2
TO-262AA
2
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified, meets JESD 201,
class 1 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
3
N/C
Anode
VS-8ETH06SHM3
1
N/C
3
Anode
VS-8ETH06-1HM3
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
VR
VF at IF
8A
600 V
1.3 V
trr typ.
18 ns
TJ max.
175 °C
Diode variation
Single die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
IFM
TJ, TStg
TEST CONDITIONS
TC = 144 °C
TJ = 25 °C
MAX.
600
8
90
16
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
600
IF = 8 A
-
Forward voltage
VF
IF = 8 A, TJ = 150 °C
-
VR = VR rated
-
Reverse leakage current
IR
TJ = 150 °C, VR = VR rated
-
Junction capacitance
CT
VR = 600 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
2.0
1.3
0.3
55
17
8.0
MAX.
-
2.4
1.8
50
500
-
-
UNITS
V
μA
pF
nH
Revision: 08-Nov-16
1
Document Number: 96045
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
