VS-8ETH06-1HM3
FEATURES
- Hyperfast recovery time
- Low forward voltage drop
- Low leakage current
- 175 °C operating junction temperature
- Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
- AEC-Q101 qualified, meets JESD 201, class 1 whisker test
- Material categorization: for definitions of pliance please see .vishay./doc?99912
N/C
Anode
VS-8ETH06SHM3
1 N/C
3 Anode
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV) VR VF at IF
8A 600 V 1.3 V trr typ.
18 ns
TJ max.
175 °C
Diode variation
Single die
DESCRIPTION
/ APPLICATIONS
State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current Peak repetitive forward current Operating junction and storage temperatures
SYMBOL VRRM IF(AV) IFSM IFM TJ, TStg
TEST CONDITIONS
TC = 144 °C TJ = 25 °C
MAX. 600
8 90 16 -55 to +175
UNITS...
