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VS-8TQ080S-M3 Datasheet High Performance Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number VS-8TQ080S-M3
Manufacturer Vishay
File Size 153.45 KB
Description High Performance Schottky Rectifier
Datasheet download datasheet VS-8TQ080S-M3 Datasheet

General Description

The VS-8TQ...

Schottky rectifier series has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 175 °C junction tempe

Overview

www.vishay.com VS-8TQ080S-M3, VS-8TQ100S-M3 Vishay Semiconductors High Performance Schottky Rectifier, 8 A Base cathode 2 D2PAK 1 N/C 3 Anode PRODUCT SUMMARY IF(AV) VR VF at IF IRM TJ max.

EAS Package Diode variation 8A 80 V, 100 V 0.58 V 7 mA at 125 °C 175 °C 7.

Key Features

  • 175 °C TJ operation.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: For definitions of compliance please see www. v.

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