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Vishay Intertechnology Electronic Components Datasheet

VS-CPV363M4KPbF Datasheet

IGBT

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www.vishay.com
VS-CPV363M4KPbF
Vishay Semiconductors
IGBT SIP Module
(Short Circuit Rated Ultrafast IGBT)
IMS-2
PRIMARY CHARACTERISTICS
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
VCES
IRMS per phase (1.94 kW total)
with TC = 90 °C
TJ
Supply voltage
Power factor
600 V
6.7 ARMS
125 °C
360 VDC
0.8
Modulation depth (see fig. 1)
VCE(on) (typical)
at IC = 6.0 A, 25 °C
Speed
115 %
1.72 V
8 kHz to 30 kHz
Package
Circuit configuration
SIP
Three phase inverter
FEATURES
• Short circuit rated ultrafast: optimized for high
speed (see fig. 1 for current vs. frequency curve),
and short circuit rated to 10 μs at 125 °C,
VGE = 15 V
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current, each IGBT
IC
Pulsed collector current
ICM
Clamped inductive load current
ILM
Diode continuous forward current
Diode maximum forward current
Short circuit withstand time
Gate to emitter voltage
Isolation voltage
IF
IFM
tSC
VGE
VISOL
Maximum power dissipation, each IGBT PD
Operating junction and
storage temperature range
Soldering temperature
TJ, TStg
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
Repetitive rating; VGE = 20 V, pulse width
limited by maximum junction temperature
See fig. 20
VCC = 80 % (VCES), VGE = 20 V,
L = 10 μH, RG = 22
See fig. 19
TC = 100 °C
Any terminal to case, t = 1 minute
TC = 25 °C
TC = 100 °C
For 10 s, (0.063" (1.6 mm) from case)
Mounting torque
6-32 or M3 screw
MAX.
600
11
6.0
22
22
6.1
22
10
± 20
2500
36
14
-40 to +150
300
5 to 7
(0.55 to 0.8)
UNITS
V
A
A
A
A
A
μs
V
VRMS
W
°C
lbf in
(N m)
Revision: 25-Oct-17
1
Document Number: 94485
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-CPV363M4KPbF Datasheet

IGBT

No Preview Available !

www.vishay.com
VS-CPV363M4KPbF
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction-to-case, each IGBT, one IGBT in conduction
Junction-to-case, each diode, one diode in conduction
Case to sink, flat, greased surface
SYMBOL
RthJC (IGBT)
RthJC (DIODE)
RthCS (MODULE)
Weight of module
TYP.
-
-
0.10
20
0.7
MAX.
3.5
5.5
-
-
-
UNITS
°C/W
g
oz.
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
V(BR)CES (1)
VGE = 0 V, IC = 250 μA
Temperature coeff. of breakdown voltage V(BR)CESTJ VGE = 0 V, IC = 1.0 mA
IC = 6.0 A
Collector to emitter saturation voltage
VCE(on)
IC = 11 A
IC = 6.0 A, TJ = 150 °C
VGE = 15 V
See fig. 2, 5
Gate threshold voltage
Temperature coeff. of threshold voltage
Forward transconductance
VGE(th)
VGE(th)/TJ
gfe (2)
VCE = VGE, IC = 250 μA
VCE = 100 V, IC = 12 A
Zero gate voltage collector current
ICES
Diode forward voltage drop
VFM
Gate to emitter leakage current
IGES
Notes
(1) Pulse width 80 μs, duty factor 0.1 %
(2) Pulse width 5.0 μs; single shot
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150 °C
IC = 12 A
IC = 12 A, TJ = 150 °C
See fig. 13
VGE = ± 20 V
MIN.
600
-
-
-
-
3.0
-
3.0
-
-
-
-
-
TYP.
-
0.45
1.72
2.00
1.60
-
- 13
6.0
-
-
1.4
1.3
-
MAX.
-
-
2.10
-
-
6.0
-
-
250
2500
1.7
1.6
± 100
UNITS
V
V/°C
V
mV/°C
S
μA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Short circuit withstand time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tSC
td(on)
tr
td(off)
tf
Ets
IC = 6 A
VCC = 400 V
See fig. 8
TJ = 25 °C
IC = 6.0 A, VCC = 480 V
VGE = 15 V, RG = 23
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 18
VCC = 360 V, TJ = 125 °C
VGE = 15 V, RG = 23 , VCPK < 500 V
TJ = 150 °C
IC = 6.0 A, VCC = 480 V
VGE = 15 V, RG = 23 
Energy losses include “tail” and
diode reverse recovery
See fig. 10, 11, 18
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse recovery
current
Diode reverse recovery charge
Diode peak rate of fall of recovery
during tb
Cies
Coes
Cres
trr
Irr
Qrr
dI(rec)M/dt
VGE = 0 V
VCC = 30 V
ƒ = 1.0 MHz
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
See fig. 14
See fig. 15
See fig. 16
See fig. 17
See fig. 7
IF = 12 A
VR = 200 V
dI/dt = 200 A/μs
MIN.
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
61
7.4
27
55
24
107
92
0.28
0.10
0.39
-
54
24
161
244
0.60
740
100
9.3
42
80
3.5
5.6
80
220
180
120
MAX.
91
11
40
-
-
160
140
-
-
0.50
-
-
-
-
-
-
-
-
-
60
120
6.0
10
180
600
-
-
UNITS
nC
ns
mJ
μs
ns
mJ
pF
ns
A
nC
A/μs
Revision: 25-Oct-17
2
Document Number: 94485
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-CPV363M4KPbF
Description IGBT
Maker Vishay
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