VS-CPV363M4UPbF Datasheet - Vishay

IGBT SIP

VS-CPV363M4UPbF Features

* IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE VCES IRMS per phase (2.1 kW total) with TC = 90 °C TJ Supply voltage Power factor 600 V 7.1 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 6.8 A, 25 °C Speed 1.7 V 8 kHz to 30

VS-CPV363M4UPbF General Description

The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This .

VS-CPV363M4UPbF Datasheet (248.55 KB)