Datasheet Details
| Part number | VS-CPV364M4FPbF |
|---|---|
| Manufacturer | Vishay |
| File Size | 248.43 KB |
| Description | IGBT SIP |
| Datasheet |
 VS-CPV364M4FPbF Datasheet
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| Part number | VS-CPV364M4FPbF |
|---|---|
| Manufacturer | Vishay |
| File Size | 248.43 KB |
| Description | IGBT SIP |
| Datasheet |
VS-CPV364M4FPbF Datasheet
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The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance.
www.vishay.com VS-CPV364M4FPbF Vishay Semiconductors IGBT SIP Module (Fast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE VCES IRMS per phase (4.6 kW total) with TC = 90 °C TJ Supply voltage Power factor 600 V 18 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig.
1) 115 % VCE(on) (typical) at IC = 15 A, 25 °C Speed 1.
| Part Number | Description |
|---|---|
| VS-CPV364M4KPbF | IGBT SIP |
| VS-CPV364M4UPbF | IGBT SIP |
| VS-CPV362M4FPbF | IGBT SIP |
| VS-CPV363M4FPbF | IGBT |
| VS-CPV363M4KPbF | IGBT |
| VS-CPV363M4UPbF | IGBT SIP |
| VS-C4PH6006LHN3 | Hyperfast Soft Recovery Diode |
| VS-C4PU3006L-N3 | Ultrafast Soft Recovery Diode |
| VS-100BGQ015 | Schottky Rectifier |
| VS-100BGQ030 | Schottky Rectifier |