VS-CPV364M4KPbF Overview
Description
The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.
Key Features
- Short circuit rated ultrafast: optimized for high speed, and short circuit rated to 10 μs at 125 °C, VGE = 15 V
- Fully isolated printed circuit board mount package
- Switching-loss rating includes all “tail” losses
- HEXFRED® soft ultrafast diodes
- UL approved file E78996
- Designed and qualified for industrial level
- Material categorization: for definitions of compliance please see
