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VS-CPV364M4UPbF Datasheet IGBT SIP

Manufacturer: Vishay

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General Description

The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance.

Overview

www.vishay.com VS-CPV364M4UPbF Vishay Semiconductors IGBT SIP Module (Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE VCES IRMS per phase (3.5 kW total) with TC = 90 °C TJ Supply voltage Power factor 600 V 12 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig.

1) 115 % VCE(on) (typical) at IC = 10 A, 25 °C Speed 1.

Key Features

  • Fully isolated printed circuit board mount package.
  • Switching-loss rating includes all “tail” losses.

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