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VS-E4PH3006LHN3 Datasheet Hyperfast Soft Recovery Diode

Manufacturer: Vishay

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General Description

Gen 4 Fred technology, state of the art, ultrafast VF, soft switching optimized for Discontinuous (Critical) Mode (DCM) and IGBT F/W diode. The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Average rectified current Single pulse forward current Operating junction and storage temperatures VR IF(AV) IFSM TJ, TStg TEST CONDITIONS TC = 122 °C TC = 25 °C, tp = 8.3 ms half sine wave MAX.

600 30 240 -55 to +175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Breakdown voltage, blocking voltage Forward voltage Reverse leakage current Junction capacitance VBR, VR VF IR CT IR = 100 μA IF = 30 A IF = 60 A IF = 30 A, TJ = 125 °C IF = 60 A, TJ = 125 °C IF = 30 A, TJ = 150 °C IF = 60 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 600 V MIN.

Overview

www.vishay.com VS-E4PH3006LHN3 Vishay Semiconductors Hyperfast Soft Recovery Diode, 30 A FRED Pt® Gen 4 2 1 3 TO-247AD 2L Base cathode 2 1 Cathode 3 Anode PRODUCT SUMMARY IF(AV) VR VF at IF trr typ.

TJ max.

Package Diode variation 30 A 600 V 1.

Key Features

  • Gen 4 FRED Pt® technology.
  • Low IRRM and reverse recovery charge.
  • Very low forward voltage drop.
  • Polymide passivated chip for high reliability standard.
  • 175 °C operating junction temperature.
  • AEC-Q101 qualified, meets JESD 201 class 1 whisker test.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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