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VS-GB75TP120N Datasheet Molding Type Module IGBT

Manufacturer: Vishay

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General Description

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.

It is designed for applications such as general inverters and UPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage VCES Gate to emitter voltage VGES Collector current Pulsed collector current IC ICM (1) TC = 25 °C TC = 80 °C tp = 1 ms Diode continuous forward current Diode maximum forward current IF IFM (1) TC = 80 °C tp = 1 ms Maximum power dissipation Short circuit withstand time I2t-value, diode RMS isolation voltage Maximum junction temperature PD TSC VISOL TJ TJ = 150 °C TJ = 125 °C VR = 0 V, t = 10 ms, TJ = 125 °C f = 50 Hz, t = 1 min Note (1) Repetitive rating: Pulse width limited by maximum junction temperature.

Overview

www.vishay.com VS-GB75TP120N Vishay Semiconductors Molding Type Module IGBT 2-in 1-Package, 1200 V, 75 A INT-A-PAK PRODUCT SUMMARY VCES IC at TC = 80 °C VCE(on) (typical) at IC = 75 A, TJ = 25 °C Package Circuit 1200 V 75 A 1.

Key Features

  • High short circuit capability, self limiting to 6 x I.
  • 10 μs short circuit capability.
  • VCE(on) with positive temperature coefficient.
  • Low inductance case.
  • Fast and soft reverse recovery antiparallel FWD.
  • Isolated copper baseplate using DCB (Direct Copper Bonding) technology.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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