Datasheet4U Logo Datasheet4U.com

VS-GP250SA60S - IGBT

Key Features

  • Standard speed Trench PT IGBT.
  • Fully isolated package.
  • Very low internal inductance ( 5 nH typical).
  • Industry standard outline.
  • UL approved file E78996.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VS-100M POWER RELAY Fujitsu
VS-100S POWER RELAY Fujitsu
VS-12M POWER RELAY Fujitsu
VS-12S POWER RELAY Fujitsu
VS-14M POWER RELAY Fujitsu

Other Datasheets by Vishay

Part Number Description
VS-GP100TS60SFPbF IGBT
VS-GP300TD60S Dual INT-A-PAK Low Profile Half Bridge Trench PT IGBT
VS-GP400TD60S Trench PT IGBT
VS-GA100TS60SFPbF Ultrafast Speed IGBT
VS-GA200HS60S1PbF Half Bridge IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com VS-GP250SA60S Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 100 A, 25 °C Speed 600 V 239 A at 90 °C 1.10 V DC to 1 kHz Package SOT-227 Circuit configuration Single switch no diode FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.