* 1200 V trench and field stop technology
* Low switching losses
* Positive temperature coefficient
* Easy paralleling
* Square RBSOA
* 10 μs short circuit capability
* HEXFRED® antiparallel diodes with ultrasoft reverse recovery
* TJ m
VS-GT180DA120U Datasheet (182.64 KB)
VS-GT180DA120U
182.64 KB
Igbt.
www.vishay.com VS-GT180DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 180 A SOT-227 PRIMARY CHARACTERISTICS VCES I.
📁 Related Datasheet
VS-GT100LA120UX IGBT (Vishay)
VS-GT100NA120UX IGBT (Vishay)
VS-GT100TP120N Half Bridge IGBT (Vishay)
VS-GT100TP60N Half Bridge IGBT (Vishay)
VS-GT120DA65U IGBT (Vishay)
VS-GT140DA60U IGBT (Vishay)
VS-GT175DA120U IGBT (Vishay)
VS-GT200TP065N Half Bridge - Trench IGBT (Vishay)
VS-GT250SA60S Insulated Gate Bipolar Transistor (Vishay)
VS-GT300FD060N DIAP Low Profile 3-Levels Half-Bridge Inverter Stage (Vishay)
