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VS-GT180DA120U Datasheet IGBT

Manufacturer: Vishay

Overview

www.vishay.com VS-GT180DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 180 A SOT-227 PRIMARY CHARACTERISTICS VCES IC(DC) VCE(on) typical at 100 A, 25 °C IF(DC) Speed 1200 V 185 A at 90 °C 1.

Key Features

  • 1200 V trench and field stop technology.
  • Low switching losses.
  • Positive temperature coefficient.
  • Easy paralleling.
  • Square RBSOA.
  • 10 μs short circuit capability.