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Vishay Intertechnology Electronic Components Datasheet

VS-GT300YH120N Datasheet

DIAP Trench IGBT

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www.vishay.com
VS-GT300YH120N
Vishay Semiconductors
DIAP Trench IGBT Power Module - 1200 V, 300 A
Current Fed Inverter Topology
PRIMARY CHARACTERISTICS
IGBT
VCES
1200 V
VCE(on) (typical) at 300 A, 25 °C
1.93 V
ID(DC) at TC = 80 °C
300 A
HEXFRED® SERIES DIODE
VR 1200 V
VF (typical) at 300 A, 25 °C
1.99 V
IF(DC) at 80 °C
300 A
IGBT AND HEXFRED® SERIES DIODE
VCE(on) + VF typical at 300 A
3.92 V
HEXFRED® ANTIPARALLEL DIODE
VF (typical) at 10 A, 25 °C
IF(DC) at 88 °C
Package
1.6 V
40 A
Dual INT-A-PAK
FEATURES
• 1200 V IGBT trench and field stop technology
with positive temperature coefficient
• Low switching losses
• Maximum junction temperature 175 °C
• 10 μs short circuit capability
• Low inductance case
• HEXFRED® antiparallel and series diodes with soft reverse
recovery
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Speed 4 kHz to 30 kHz
• Direct mounting to heatsink
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Short circuit ruggedness
REMARKS
• Product reliability results valid for TJ = 150 °C
• Recommended operation temperature Top = 150 °C
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
IGBT
Collector to emitter voltage
Collector current
Pulsed collector current
Clamped inductive load current
Gate to emitter voltage
Maximum power dissipation
SERIES DIODE
VCES
IC
ICM
ILM (1)
VGE
PD
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
Cathode to anode breakdown voltage
Continuous forward current
Peak repetitive forward current
Maximum power dissipation
VRRM
IF
IFSM
PD
TC = 80 °C
TC = 25 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
MAX.
1200
300
400
720
700
± 20
791
1250
1200
300
412
2200
593
938
UNITS
V
A
V
W
A
A
W
Revision: 20-Mar-2019
1 Document Number: 94681
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-GT300YH120N Datasheet

DIAP Trench IGBT

No Preview Available !

www.vishay.com
VS-GT300YH120N
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
ANTPARALLEL DIODE
Continuous forward current
Peak repetitive forward current
Maximum power dissipation
MODULE
IF (2)
IFSM
PD
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
42
57
n/a
106
167
RMS isolation voltage
Junction temperature range
Storage temperature range
VISOL
TJ
TSTG
f = 50 Hz, t = 1 minute
-40 °C to +175 °C
-40 °C to +150 °C
4000
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur
(1) VCC = 600 V, VP = 1200 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 150 °C
(2) Maximum RMS current admitted for the terminals 10 A
UNITS
A
A
W
V
°C
ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
IGBT
Collector to emitter breakdown voltage
Collector to emitter saturation voltage
Gate to emitter threshold voltage
Forward transconductance
Transfer characteristics
Collector to emitter leakage current
Gate to emitter leakage current
SERIES DIODE
V(BR)CES
VCE(on)
VGE(th)
gfe
VGE
ICES
IGES
VGE = 0 V, IC = 11.4 mA, TJ = 25 °C
VGE = 15 V, IC = 300 A, TJ = 25 °C
VGE = 15 V, IC = 300 A, TJ = 125 °C
VGE = 15 V, IC = 300 A, TJ = 150 °C
VCE = VGE, IC = 11.4 mA, TJ = 25 °C
VCE = 20 V, IC = 300 A
VCE = 20 V, IC = 300 A
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
VGE = ± 20 V
Cathode to anode breakdown voltage
Cathode to anode leakage current
Forward voltage
VR IR = 1.0 mA, TJ = 125 °C
VR = 1200 V
IR
VR = 1200 V, TJ = 125 °C
IF = 300 A
VF
IF = 300 A, TJ = 125 °C
ANTIPARALLEL DIODE
Forward voltage
IGBT AND HEXFRED® SERIES DIODE
IF = 10 A
VF
IF = 10 A, TJ = 125 °C
Collector to emitter saturation voltage and
Forward voltage
VCE(on) + VF
IC = 300 A
MIN. TYP. MAX. UNITS
1200
-
-
- 1.93 -
- 2.24 -
V
- 2.32 -
- 5.8 -
- 130 -
S
- 8.9 -
V
- 1.3 -
- 0.95 -
mA
- 3.7 -
- - 250 nA
1200
-
-
-
-
-
0.05
3.5
1.99
2.02
-
0.2
-
-
-
V
mA
V
- 1.6 -
- 1.4 -
V
- 3.92 -
V
Revision: 20-Mar-2019
2 Document Number: 94681
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-GT300YH120N
Description DIAP Trench IGBT
Maker Vishay
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VS-GT300YH120N Datasheet PDF






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