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VS-GT300YH120N - DIAP Trench IGBT

Key Features

  • 1200 V IGBT trench and field stop technology with positive temperature coefficient.
  • Low switching losses.
  • Maximum junction temperature 175 °C.
  • 10 μs short circuit capability.
  • Low inductance case.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-GT300YH120N Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology PRIMARY CHARACTERISTICS IGBT VCES 1200 V VCE(on) (typical) at 300 A, 25 °C 1.93 V ID(DC) at TC = 80 °C 300 A HEXFRED® SERIES DIODE VR 1200 V VF (typical) at 300 A, 25 °C 1.99 V IF(DC) at 80 °C 300 A IGBT AND HEXFRED® SERIES DIODE VCE(on) + VF typical at 300 A 3.92 V HEXFRED® ANTIPARALLEL DIODE VF (typical) at 10 A, 25 °C IF(DC) at 88 °C Package 1.