* High speed trench gate field-stop IGBT positive temperature coefficient
* TJ maximum = 175 °C
* FRED Pt® anti-parallel diodes with ultrasoft reverse recovery
* Fully isolated package
* Very low internal inductance ( 5 nH typical)
* Industry standard
VS-GT80DA60U Datasheet (171.67 KB)
VS-GT80DA60U
171.67 KB
Igbt.
www.vishay.com VS-GT80DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 80 A SOT-227 PRIMARY CHARACTERISTICS VC.
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