VS-HFA08TB60-M3
FEATURES
- Ultrafast and ultrasoft recovery
- Very low IRRM and Qrr
- Designed and qualified according to
JEDEC®-JESD 47
- Material categorization: for definitions of pliance please see .vishay./doc?99912
BENEFITS
- Reduced RFI and EMI
- Reduced power loss in diode and switching transistor
- Higher frequency operation
- Reduced snubbing
- Reduced parts count
PRIMARY CHARACTERISTICS
IF(AV)
8A
600 V
VF at IF
1.4 V trr typ. TJ max.
18 ns 150 °C
Package
TO-220AC 2L
Circuit configuration
Single
DESCRIPTION
VS-HFA08TB60... is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb bination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 8 A continuous current, the VS-HFA08TB60... is especially well suited for use as the panion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time,...
