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VS-HFA08TB60S-M3 - Ultrafast Soft Recovery Diode

General Description

VS-HFA08TB60S is a state of the art ultrafast recovery diode.

Key Features

  • Ultrafast and ultrasoft recovery.
  • Very low IRRM and Qrr.
  • Specified at operating conditions.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-HFA08TB60S-M3 Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 8 A 2 1 3 D2PAK (TO-263AB) Base cathode 2 1 N/C 3 Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF trr (typ.) TJ max. Package 8A 600 V 1.4 V 18 ns 150 °C D2PAK (TO-263AB) Circuit configuration Single FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Specified at operating conditions • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Reduced RFI and EMI • Reduced power loss in diode and switching transistor • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION VS-HFA08TB60S is a state of the art ultrafast recovery diode.