VS-HFA15TB60-M3 Datasheet | Vishay

FEATURES - Ultrafast and ultrasoft recovery - Very low IRRM and Qrr - Designed and qualified according to JEDEC®-JESD 47 - Material categorization: for definitions of pliance please see .vishay./doc?99912 Base cathode Cathode Anode BENEFITS - Reduced RFI and EMI - Reduced power loss in diode and switching transistor - Higher frequency operation - Reduced snubbing - Reduced parts count PRIMARY CHARACTERISTICS IF(AV) VR VF at IF trr typ. TJ max. Circuit configuration 15 A 600 V 1.2 V 23 ns 150 °C Single Package TO-220AC 2L DESCRIPTION VS-HFA15TB60... is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb bination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 15 A continuous current, the VS-HFA15TB60... is especially well suited for use as the panion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features bine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, ponent count and heatsink sizes. The HEXFRED VS-HFA15TB60... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current Single pulse forward current Maximum repetitive forward current Maximum power dissipation Operating junction and storage temperature range SYMBOL VR IF IFSM IFRM TJ, TStg TEST CONDITIONS TC = 100 °C TC =...