VS-MBR1035-M3 Datasheet High Performance Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com VS-MBR1035-M3, VS-MBR1045-M3 Vishay Semiconductors High Performance Schottky Rectifier, 10 A Base cathode 2 2L TO-220AC 13 Cathode Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM max. TJ max. EAS Package 10 A 35 V, 45 V 0.

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Datasheet Details

Part number	VS-MBR1035-M3
Manufacturer	Vishay
File Size	149.18 KB
Description	High Performance Schottky Rectifier
Download	VS-MBR1035-M3 Download (PDF)

General Description

This Schottky rectifier has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.

Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.

Key Features

150 °C TJ operation.
High frequency operation.
Low forward voltage drop.
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
Guard ring for enhanced ruggedness and long term reliability.
Designed and qualified according to JEDEC®-JESD 47.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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