Datasheet Summary
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VS-MBR2035CT-M3, VS-MBR2045CT-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 10 A
Base 2 mon cathode
1 2 3
TO-220AB 3L
Anode
Anode
1 mon 3 cathode
PRIMARY CHARACTERISTICS
IF(AV) VR VF at IF IRM max. TJ max. EAS Package
2 x 10 A 35 V, 45 V
0.57 V 15 mA at 125 °C
150 °C 8 mJ TO-220AB 3L
Circuit configuration mon cathode
Features
- 150 °C TJ operation
- Low forward voltage drop
- High frequency operation
- High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
- Guard ring for enhanced ruggedness and long term reliability
- Designed and qualified according to JEDEC®-JESD 47
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