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VS-MBRB1035-M3 Datasheet High Performance Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com VS-MBRB1035-M3, VS-MBRB1045-M3 Vishay Semiconductors High Performance Schottky Rectifier, 10 A Base cathode 2 2 1 3 D2PAK (TO-263AB) 1 N/C 3 Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM TJ max. EAS Package 10 A 35 V, 45 V 0.

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General Description

This Schottky rectifier has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.

Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.

Key Features

  • 150 °C TJ operation.
  • TO-220 and D2PAK packages.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: for defini.

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