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VS-ST180SPbF Series
Vishay Semiconductors
Phase Control Thyristors (Stud Version), 200 A
TO-93 (TO-209AB)
PRIMARY CHARACTERISTICS
IT(AV) VDRM/VRRM
VTM IGT TJ Package
200 A 1600 V, 2000 V
1.75 V 150 mA -40 °C to +125 °C TO-93 (TO-209AB)
Circuit configuration
Single SCR
FEATURES • Center amplifying gate • International standard case TO-93 (TO-209AB)) • Hermetic metal case with ceramic insulator • Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling • Designed and qualified for industrial level • Material categorization: for definitions of compliance
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