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Vishay Intertechnology Electronic Components Datasheet

VS-VSK.270PbF Datasheet

Standard Recovery Diode

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VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes
(MAGN-A-PAK Power Modules), 250 A to 320 A
MAGN-A-PAK
FEATURES
• High voltage
• Electrically isolated base plate
• 3000 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
250 A to 320 A
Type
Modules - diode, high voltage
Package
MAGN-A-PAK
Circuit
configuration
Two diodes doubler circuit,
two diodes common cathode, single diode
DESCRIPTION / APPLICATIONS
This VS-VSK series of MAGN-A-PAKs uses high voltage
power diodes in two basic configurations. The
semiconductors are electrically isolated from the metal
base, allowing common heatsinks and compact assemblies
to be built. They can be interconnected to form single phase
or three phase bridges and the single diode module can be
used in conjunction with the thyristor modules as a
freewheel diode.
These modules are intended for general purpose
applications such as battery chargers, welders and plating
equipment and where high voltage and high current are
required (motor drives, etc.)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.250..
IF(AV)
IF(RMS)
IFSM
TC
50 Hz
60 Hz
250
100
393
7015
7345
50 Hz
246
I2t
60 Hz
225
I2t
2460
VRRM
TJ
400 to 2000
VSK.270..
270
100
424
8920
9430
398
363
3980
400 to 3000
-40 to +150
VSK.320..
320
100
502
10 110
10 580
511
466
5110
400 to 2000
UNITS
A
°C
A
kA2s
kA2s
V
°C
Revision: 03-Apr-2019
1
Document Number: 93581
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-VSK.270PbF Datasheet

Standard Recovery Diode

No Preview Available !

VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VS-VSK.270
VS-VSK.320
04
08
VS-VSK.250
12
VS-VSK.270
VS-VSK.320
16
20
VS-VSK.270
30
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1600
2000
3000
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1700
2100
3100
IRRM MAXIMUM
AT 150 °C
mA
50
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
VSK.250 VSK.270 VSK.320
Maximum average forward
current at case temperature
IF(AV)
180° conduction, half sine wave
250
270
320
A
100
100
100
°C
Maximum RMS forward current
IF(RMS) As AC switch
393
424
502
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 %
VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial
TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 %
VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
7015
7345
5900
6180
246
225
174
159
2460
8920
9340
7500
7850
398
363
281
257
3980
10 110
10 580 A
8500
8900
511
466
kA2s
361
330
5110 kA2s
Low level value of threshold voltage VF(TO)1
High level value of threshold voltage VF(TO)2
Low level forward slope resistance
rf1
High level forward slope resistance
rf2
Maximum forward voltage drop
VFM
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
IFM = x IF(AV), TJ = TJ maximum, 180° conduction
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
0.79
0.92
0.63
0.49
1.29
0.74
0.87
0.94
0.81
1.48
0.69
V
0.86
0.59
m
0.44
1.28
V
BLOCKING
PARAMETER
Maximum peak reverse
leakage current
RMS insulation voltage
SYMBOL
TEST CONDITIONS
IRRM
TJ = 150 °C
VINS
50 Hz, circuit to base, all terminals shorted, t = 1 s
VALUES
50
3000
UNITS
mA
V
Revision: 03-Apr-2019
2
Document Number: 93581
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-VSK.270PbF
Description Standard Recovery Diode
Maker Vishay
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VS-VSK.270PbF Datasheet PDF






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