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VSSAF3L45 - Surface Mount Trench MOS Barrier Schottky Rectifier

Features

  • Very low profile - typical height of 0.95 mm.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low power losses, high efficiency.
  • Low forward voltage drop.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VSSAF3L45
Manufacturer Vishay
File Size 86.87 KB
Description Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VSSAF3L45 Datasheet
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Full PDF Text Transcription

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www.vishay.com VSSAF3L45 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® SlimSMATM Top View Bottom View DO-221AC FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 45 V IFSM IR at VR = 45 V (125 °C) 80 A 5 mA VF at IF = 3.0 A (125 °C) 0.37 V TJ max.
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