Download VT6045CBP Datasheet PDF
VT6045CBP datasheet preview
VT6045CBP page 2
Page 2
VT6045CBP page 3
Page 3

VT6045CBP Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Solder dip 275 °C max. 10 s, per JESD 22-B106
  • TJ 200 °C max. in solar bypass mode application
  • Material categorization: for definitions of pliance

Related Vishay Datasheets

Part Number Description
VT6045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT6045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT6045CHM3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT60M45C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VT60M45CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VT6045CBP Description

.vishay. VT6045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A TMBS ® TO-220AB VT6045CBP 3 2 1 PIN 1 PIN 2 PIN.