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Vishay Intertechnology Electronic Components Datasheet

25F80 Datasheet

Standard Recovery Diodes

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25F(R) Series
Vishay High Power Products
www.DataSheet4U.com
Standard Recovery Diodes
(Stud Version), 25 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V VRRM
• RoHS compliant
DO-203AA (DO-4)
PRODUCT SUMMARY
IF(AV)
25 A
TYPICAL APPLICATIONS
• Battery charges
• Converters
• Power supplies
• Machine tool controls
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
IF(RMS)
IFSM
I2t
VRRM
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Range
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
10 100
20 200
40 400
25F(R)
60
600
80 800
100 1000
120 1200
Note
(1) Avalanche version only available from VRRM 400 V to 1200 V
VALUES
25
120
40
356
373
636
580
100 to 1200
- 65 to 175
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
150
275
500
725
950
1200
1400
VR(BR), MINIMUM
AVALANCHE
VOLTAGE
V (1)
-
-
500
750
950
1150
1350
UNITS
A
°C
A
A
A2s
V
°C
IRRM MAXIMUM
AT TJ = 175 °C
mA
12
Document Number: 93506
Revision: 29-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

25F80 Datasheet

Standard Recovery Diodes

No Preview Available !

25F(R) Series
Vishay High Power Products Standard Recovery Diodes
(Stud Version), 25 A
www.DataSheet4U.com
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
at case temperature
IF(AV) 180° conduction, half sine wave
Maximum RMS forward current
Maximum on-repetitive peak
reverse power
IF(RMS)
PR(1)
10 µs square pulse, TJ = TJ maximum
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I2t for fusing
Maximum I2t for fusing
t = 10 ms No voltage
t = 8.3 ms reapplied
IFSM
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
Sinusoidal half wave,
t = 10 ms No voltage
initial TJ = TJ maximum
t = 8.3 ms reapplied
I2t
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
I2t t = 0.1 to 10 ms, no voltage reapplied
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
VF(TO)1
VF(TO)2
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
High level value of forward
slope resistance
rf2 (I > π x IF(AV)), TJ = TJ maximum
Maximum forward voltage drop
VFM Ipk = 78 A, TJ = 25 °C, tp = 400 µs rectangular wave
Note
(1) Available only for avalanche version, all other parameters the same as 25F
VALUES
25
120
40
10
356
373
300
314
636
580
450
410
6360
0.80
0.90
6.80
5.70
1.30
UNITS
A
°C
A
K/W
A
A2s
A2s
V
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
TJ
Maximum storage temperature range
Maximum thermal resistance,
junction to case
TStg
RthJC
DC operation
Maximum thermal resistance,
case to heatsink
RthCS Mounting surface, smooth, flat and greased
Allowable mounting torque
Not lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
- 65 to 175
- 65 to 200
°C
1.5
K/W
0.5
1.5 + 0 - 10 %
(13)
N·m
(lbf · in)
1.2 + 0 - 10 %
(10)
N·m
(lbf · in)
7g
0.25 oz.
DO-203AA (DO-4)
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93506
Revision: 29-Sep-08


Part Number 25F80
Description Standard Recovery Diodes
Maker Vishay Siliconix
PDF Download

25F80 Datasheet PDF






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