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Vishay Intertechnology Electronic Components Datasheet

2N7002 Datasheet

N-channel MOSFET

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2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W)
2N7000
2N7002
VQ1000J
VQ1000P
BS170
5 @ VGS = 10 V
7.5 @ VGS = 10 V
60 5.5 @ VGS = 10 V
5.5 @ VGS = 10 V
5 @ VGS = 10 V
VGS(th) (V)
0.8 to 3
1 to 2.5
0.8 to 2.5
0.8 to 2.5
0.8 to 3
ID (A)
0.2
0.115
0.225
0.225
0.5
FEATURES
D Low On-Resistance: 2.5 W
D Low Threshold: 2.1 V
D Low Input Capacitance: 22 pF
D Fast Switching Speed: 7 ns
D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-226AA
(TO-92)
S1
G2
D3
Top View
2N7000
Dual-In-Line
D1 1
N S1 2
G1 3
NC 4
G2 5
N S2 6
D2 7
14 D4
13 S4
12 G4
11 NC
10 G3
9 S3
8 D3
Top View
Plastic: VQ1000J
Sidebraze: VQ1000P
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
N
N
TO-236
(SOT-23)
G1
S2
3D
Top View
Marking Code: 72wll
72 = Part Number Code for 2N7002
w = Week Code
ll = Lot Traceability
TO-92-18RM
(TO-18 Lead Form)
D1
G2
S3
Top View
BS170
www.vishay.com
11-1


Vishay Intertechnology Electronic Components Datasheet

2N7002 Datasheet

N-channel MOSFET

No Preview Available !

2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single
Total Quad
Parameter
Drain-Source Voltage
Gate-Source VoltageNon-Repetitive
Gate-Source VoltageContinuous
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C
TA= 100_C
Power Dissipation
TA= 25_C
TA= 100_C
Thermal Resistance, Junction-to-Ambient
Operating Junction and
Storage Temperature Range
Symbol
VDS
VGSM
VGS
ID
IDM
PD
RthJA
TJ, Tstg
2N7000
60
"40
"20
0.2
0.13
0.5
0.4
0.16
312.5
2N7002
60
"40
"20
0.115
0.073
0.8
0.2
0.08
625
VQ1000J
60
"30
"20
0.225
0.14
1
1.3
0.52
96
VQ1000P
60
"20
0.225
0.14
1
1.3
0.52
96
VQ1000J/P
BS170
60
"25
"20
0.5
0.175
Unit
V
A
2
0.8
62.5
0.83
156
W
_C/W
55 to 150
_C
Notes
a. Pulse width limited by maximum junction temperature.
b. tp v 50 ms.
SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000
2N7002
Parameter
Symbol
Test Conditions
Typa Min Max Min Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-Resistanceb
Forward Transconductanceb
Common Source Output Conductanceb
Dynamic
rDS(on)
gfs
gos
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 0.25 mA
VDS = 0 V, VGS = "15 V
VDS = 0 V, VGS = "20 V
VDS = 48 V, VGS = 0 V
TC = 125_C
VDS = 60 V, VGS = 0 V
TC = 125_C
VDS = 10 V, VGS = 4.5 V
VDS = 7.5 V, VGS = 10 V
VGS = 4.5 V, ID = 0.075 A
VGS = 5 V, ID = 0.05 A
TC = 125_C
VGS = 10 V, ID = 0.5 A
TJ = 125_C
VDS = 10 V, ID = 0.2 A
VDS = 5 V, ID = 0.05 A
70 60
2.1 0.8
3
2.0
"10
1
1000
0.35
1
4.5
3.2
5.8
2.4
4.4
0.5
0.075
100
5.3
5
9
60
1 2.5
V
nA
"100
mA
1
500
A
0.5
7.5
13.5
W
7.5
13.5
80
mS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
22 60 50
VDS = 25 V, VGS = 0 V
f = 1 MHz
11
25
25 pF
25 5
www.vishay.com
11-2
Document Number: 70226
S-04279Rev. F, 16-Jul-01


Part Number 2N7002
Description N-channel MOSFET
Maker Vishay Siliconix
PDF Download

2N7002 Datasheet PDF






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