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Vishay Intertechnology Electronic Components Datasheet

45P03-10 Datasheet

SUD45P03-10

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SUD45P03-10
Vishay Siliconix
P-Channel 30-V (D-S), 150_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.010 @ VGS = –10 V
–30
0.018 @ VGS = –4.5 V
TO-252
ID (A)a
–15
–12
S
GDS
Top View
Order Number:
SUD45P03-10
Drain Connected to Tab
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currentb
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 100_C
TC = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–30
"20
–15
–8
–100
–15
70
4b
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb
Maximum Junction-to-Case
RthJA
RthJC
30
_C/W
1.8
Notes
a. Calculated Rating for TA = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical
Characteristics).
b. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70766
S-02596—Rev. D, 21-Nov-00
www.vishay.com
2-1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

45P03-10 Datasheet

SUD45P03-10

No Preview Available !

www.DataSheet.co.kr
SUD45P03-10
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 125_C
VDS = 5 V, VGS = 10 V
VDS = 5 V, VGS = 4.5 V
VGS = 10 V, ID = 15 A
VGS = 10 V, ID = 15 A, TJ = 125_C
VGS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 45 A
VDD = 15 V, RL = 0.33 W
ID ^ 45 A, VGEN = 10 V, RG = 2.4 W
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
Diode Forward Voltagea
Source-Drain Reverse Recovery Time
ISM
VSD
trr
IF = 45 A, VGS = 0 V
IF = 45 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
30
1.0
50
20
20
"100
1
50
0.010
0.015
0.018
V
nA
mA
A
W
S
6000
1100
700
90
20
16
15
375
100
140
150
25
550
200
250
pF
nC
ns
100 A
1.0 1.5
V
55 100 ns
www.vishay.com
2-2
Document Number: 70766
S-02596Rev. D, 21-Nov-00
Datasheet pdf - http://www.DataSheet4U.net/


Part Number 45P03-10
Description SUD45P03-10
Maker Vishay Siliconix
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