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AN601 - Unclamped Inductive Switching Rugged MOSFETs

Key Features

  • 00 400 600 800 1000 and A r = = = the active chip area (where heat originates) t.

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Datasheet Details

Part number AN601
Manufacturer Vishay
File Size 131.05 KB
Description Unclamped Inductive Switching Rugged MOSFETs
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Full PDF Text Transcription for AN601 (Reference)

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www.DataSheet.co.kr AN601 Vishay Siliconix Unclamped Inductive Switching Rugged MOSFETs For Rugged Environments The evolution of the power MOSFET has resulted in a very r...

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nvironments The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents when subjected to unclamped inductive switching. Historically, MOSFET manufacturers chose to quantify ruggedness, not based principally on individual performance, but rather on comparative performance with other manufacturers. Siliconix has optimized the cell structure of power MOSFETs, resulting in a new class of extremely rugged devices. Today’s avalanche-rated MOSPOWER FET exhibits a ruggedness that far exceeds the performance of any