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BAR63V-04W - RF PIN Diode

Description

Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning.

As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation.

Features

  • Low forward resistance.
  • Very small reverse capacitance.

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📁 Similar Datasheet

Part Number Description Manufacturer
BAR63 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens Semiconductor Group
BAR63 Silicon PIN Diodes Infineon Technologies AG
BAR63-02L Silicon PIN Diodes Infineon Technologies AG
BAR63-02V Silicon PIN Diodes Infineon Technologies AG
BAR63-02W Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance) Siemens Semiconductor Group

Other Datasheets by Vishay

Part Number Description
BAR63V-02V RF PIN Diode

Full PDF Text Transcription (Reference)

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www.DataSheet4U.com VISHAY BAR63V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applications for this PIN Diodes are wireless, mobile and TV-systems. 2 1 1 2 18379 3 3 Features • Low forward resistance • Very small reverse capacitance Applications For frequency up to 3 GHz RF-signal tuning Mobile , wireless and TV-Applications Mechanical Data Case: Plastic case (SOT-323) Weight: approx. 6.
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