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Vishay Intertechnology Electronic Components Datasheet

BAT42WS-V Datasheet

(BAT42WS-V / BAT43WS-V) Small Signal Schottky Diodes

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www.DataSheet.co.kr
BAT42WS-V, BAT43WS-V
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• These diodes feature very low turn-on
voltage and fast switching. These devices
are protected by a PN junction guard ring
against excessive voltage, such as
electrostatic discharges
• These diodes are also available in the
DO-35 case with the type designations BAT42 to
BAT43, in MiniMELF SOD-80 case with the type
designations
LL42 to LL43, and in SOD-123 plastic case with
the type designations BAT42W-V to BAT43W-V
• For general purpose applications
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAT42WS-V
BAT43WS-V
Ordering code
BAT42WS-V-GS18 or BAT42WS-V-GS08
BAT43WS-V-GS18 or BAT43WS-V-GS08
20145
Type marking
L2
L3
Remarks
Tape and reel
Tape and reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Forward continuous current
Repetitive peak forward current
Surge forward current
Power dissipation 1)
tp < 1 s, δ < 0.5
tp < 10 ms
Note:
1) Valid provided that electrodes are kept at ambient temperature
Symbol
VRRM
IF
IFRM
IFSM
Ptot
Value
30
200 1)
500 1)
4 1)
150 1)
Unit
V
mA
mA
A
mW
Document Number 81813 For technical questions within your region, please contact one of the following:
Rev. 1.1, 05-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

BAT42WS-V Datasheet

(BAT42WS-V / BAT43WS-V) Small Signal Schottky Diodes

No Preview Available !

www.DataSheet.co.kr
BAT42WS-V, BAT43WS-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Junction temperature
Ambient operating temperature range
Storage temperature range
Note:
1) Valid provided that electrodes are kept at ambient temperature
Symbol
RthJA
Tj
Tamb
Tstg
Value
650 1)
125
- 55 to + 125
- 55 to + 150
Unit
K/W
°C
°C
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part Symbol Min. Typ. Max. Unit
Reverse breakdown voltage
IR = 100 µA (pulsed)
V(BR)
30
V
Leakage current 1)
VR = 25 V
VR = 25 V, Tj = 100 °C
IR
IR
0.5 µA
100 µA
IF = 200 mA
VF
1000
mV
IF = 10 mA
BAT42WS-V
VF
400 mV
Forward voltage 1)
IF = 50 mA
BAT42WS-V
VF
650 mV
IF = 2 mA
BAT43WS-V
VF
260
330 mV
IF = 15 mA
BAT43WS-V
VF
450 mV
Diode capacitance
VR = 1 V, f = 1 MHz
CD 7 pF
Reverse recovery time
IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 Ω
trr
5 ns
Note:
1) Pulse test tp < 300 µs, tp/T < 0.02
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
250
200
150
100
50
0
0
20981
50 100 150
Tamb - Ambient Temperature (°C)
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
1000
100
125 °C
10
1
- 40 °C
25 °C
0.1
0.01
0 200 400 600 800 1000 1200
18443
VF - Instantaneous Forward Voltage (mV)
Figure 2. Typical Forward Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 81813
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.1, 05-Aug-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number BAT42WS-V
Description (BAT42WS-V / BAT43WS-V) Small Signal Schottky Diodes
Maker Vishay Siliconix
Total Page 4 Pages
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