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Vishay Intertechnology Electronic Components Datasheet

GA200HS60S1PBF Datasheet

IGBT

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GA200HS60S1PbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Standard Speed IGBT), 200 A
INT-A-PAK
FEATURES
• Generation 4 IGBT technology
• Standard: Optimized for hard switching speed
DC to 1 kHz
• Very low conduction losses
• Industry standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 200 A, 25 °C
600 V
480 A
1.13 V
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized as output inverter stage for TIG
welding machines
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
Gate to emitter voltage
RMS isolation voltage
ICM
ILM
VGE
VISOL
Maximum power dissipation
PD
TEST CONDITIONS
TC = 25 °C
TC = 116 °C
Any terminal to case, t = 1 minute
TC = 25 °C
TC = 85 °C
MAX.
600
480
200
800
800
± 20
2500
830
430
UNITS
V
A
V
W
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Collector to emitter leakage current
Gate to emitter leakage current
VBR(CES)
VCE(on)
VGE(th)
ICES
IGES
VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 200 A
VGE = 15 V, IC = 200 A, TJ = 125 °C
IC = 0.25 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
VGE = ± 20 V
600
-
-
3
-
-
-
TYP.
-
1.13
1.08
4.5
0.025
-
-
MAX.
-
1.21
1.18
6
1
10
± 250
UNITS
V
mA
nA
Document Number: 94362
Revision: 03-May-10
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

GA200HS60S1PBF Datasheet

IGBT

No Preview Available !

www.DataSheet.co.kr
GA200HS60S1PbF
Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK
(Standard Speed IGBT), 200 A
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Qg
Qge
Qgc
Eon
Eoff
Ets
Eon
Eoff
Ets
Cies
Coes
Cres
IC = 200 A
VCC = 400 V
VGE = 15 V
IC = 200 A, VCC = 480 V, VGE = 15 V
Rg = 10 Ω
Freewheeling diode: 30EPH06, TJ = 25 °C
IC = 200 A, VCC = 480 V, VGE = 15 V
Rg = 10 Ω
Freewheeling diode: 30EPH06, TJ = 125 °C
VGE = 0 V
VCC = 30 V
f = 1.0 MHz
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
1600
260
580
30
50
80
34
104
138
32 500
2080
380
MAX.
1700
340
670
-
-
-
-
-
151
-
-
-
UNITS
nC
mJ
mJ
pF
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction temperature range
Storage temperature range
Junction to case per leg
Case to sink
Mounting torque
case to heatsink
case to terminal 1, 2, 3
TJ
TStg
RthJC
RthCS
Weight
MIN.
- 40
- 40
-
-
-
-
-
TYP.
-
-
-
0.1
-
-
185
MAX.
150
125
0.15
-
4
3
-
UNITS
°C
°C/W
Nm
g
1000
VGE = 15 V
500 µs pulse width
TJ = 125 °C
100
TJ = 25 °C
10
0.6 0.8 1.0 1.2 1.4 1.6
VCE - Collector to Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
1000
100 TJ = 125 °C
10
TJ = 25 °C
1
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGE - Gate to Emitter Voltage (V)
Fig. 2 - Typical Transfer Characteristics
www.vishay.com
2
For technical questions, contact: indmodules@vishay.com
Document Number: 94362
Revision: 03-May-10
Datasheet pdf - http://www.DataSheet4U.net/


Part Number GA200HS60S1PBF
Description IGBT
Maker Vishay Siliconix
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