GA200HS60S1PBF Datasheet | Vishay

FEATURES - Generation 4 IGBT technology - Standard: Optimized for hard switching speed DC to 1 k Hz - Very low conduction losses - Industry standard package - UL approved file E78996 - pliant to Ro HS directive 2002/95/EC INT-A-PAK - Designed and qualified for industrial level PRODUCT SUMMARY VCES IC DC VCE(on) at 200 A, 25 °C 600 V 480 A 1.13 V BENEFITS - Increased operating efficiency - Direct mounting to heatsink - Performance optimized as output inverter stage for TIG welding machines ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Peak switching current Gate to emitter voltage RMS isolation voltage Maximum power dissipation SYMBOL VCES IC ICM ILM VGE VISOL PD Any terminal to case, t = 1 minute TC = 25 °C TC = 85 °C TC = 25 °C TC = 116 °C TEST CONDITIONS MAX. 600 480 200 800 800 ± 20 2500 830 430 V A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leakage current Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) ICES IGES TEST CONDITIONS VGE = 0 V, IC = 1 m A VGE = 15 V, IC = 200 A VGE = 15 V, IC = 200 A, TJ = 125 °C IC = 0.25 m A VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 125 °C VGE = ± 20 V MIN. 600 3 TYP. 1.13 1.08 4.5 0.025 MAX. 1.21 1.18 6 1 10 ± 250 m A n A V UNITS Document Number: 94362 Revision: 03-May-10 For technical questions, contact: indmodules@vishay. .vishay. 1 Datasheet pdf - http://..net/ .Data Sheet.co.kr GA200HS60S1Pb F Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 200 A SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Total gate charge Gate to emitter charge Gate to collector charge Turn-on switching loss Turn-off switching loss Total switching loss Turn-on switching loss Turn-off switching loss Total switching loss Input capacitance Output...