Datasheet4U Logo Datasheet4U.com

GT100DA60U Datasheet - Vishay Siliconix

Insulated Gate Bipolar Transistor

GT100DA60U Features

* Trench IGBT technology temperature coefficient

* Square RBSOA

* 3 μs short circuit capability

* FRED Pt® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive

* TJ maximum = 175 °C

* Fully isolated package

* Very low in

GT100DA60U Datasheet (240.15 KB)

Preview of GT100DA60U PDF

Datasheet Details

Part number:

GT100DA60U

Manufacturer:

Vishay ↗ Siliconix

File Size:

240.15 KB

Description:

Insulated gate bipolar transistor.

📁 Related Datasheet

GT100DA120U Insulated Gate Bipolar Transistor (Vishay Siliconix)

GT1003B MOSFET (GOFORD)

GT100LA120UX IGBT (Vishay Siliconix)

GT100NA120UX IGBT (Vishay Siliconix)

GT10 Programmable Display (NAiS)

GT101 PCB to Wire Connector (ANN REN)

GT105N10 N-Channel Enhancement Mode Power MOSFET (GOFORD)

GT105N10F N-Channel Enhancement Mode Power MOSFET (GOFORD)

GT105N10K N-Channel Enhancement Mode Power MOSFET (GOFORD)

GT105N10T N-Channel Enhancement Mode Power MOSFET (GOFORD)

TAGS

GT100DA60U Insulated Gate Bipolar Transistor Vishay Siliconix

Image Gallery

GT100DA60U Datasheet Preview Page 2 GT100DA60U Datasheet Preview Page 3

GT100DA60U Distributor