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GT100DA60U Datasheet Insulated Gate Bipolar Transistor

Manufacturer: Vishay

Overview: www.DataSheet.co.kr GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100.

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Key Features

  • Trench IGBT technology temperature coefficient.
  • Square RBSOA.
  • 3 μs short circuit capability.
  • FRED Pt® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive.
  • TJ maximum = 175 °C.
  • Fully isolated package.
  • Very low internal inductance ( 5 nH typical).
  • Industry standard outline.
  • UL approved file E78996.
  • Compliant to RoHS directive 2002/95/EC 600 V 100 A at 117 °C 1.72 V 100 A at 25 °C P.

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