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ILD1207T - Optocoupler

Download the ILD1207T datasheet PDF. This datasheet also covers the ILD1205T variant, as both devices belong to the same optocoupler family and are provided as variant models within a single manufacturer datasheet.

General Description

The 110 °C rated ILD1205T/1206T/1207T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor.

Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output.

Key Features

  • Operating temperature from - 55 °C to + 110 °C.
  • Two Channel Coupler.
  • SOIC-8 Surface Mountable Package.
  • Isolation Test Voltage, 4000 VRMS.
  • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering.
  • Lead (Pb)-free component.
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A1 C2 A3 C4 i179018 8C 7E 6C 5E.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ILD1205T_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr ILD1205T/1206T/1207T Vishay Semiconductors Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 package, 110 °C Rated FEATURES • Operating temperature from - 55 °C to + 110 °C • Two Channel Coupler • SOIC-8 Surface Mountable Package • Isolation Test Voltage, 4000 VRMS • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A1 C2 A3 C4 i179018 8C 7E 6C 5E DESCRIPTION The 110 °C rated ILD1205T/1206T/1207T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output.