Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Key Features
Dynamic dV/dt rating.
Logic-level gate drive
Available.
RDS(on) specified at VGS = 4 V and 5 V.
175 °C operating temperature
Available.
Fast switching.
Ease of paralleling.
Simple drive requirements.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912
Note.
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant.
Full PDF Text Transcription for IRLZ14 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRLZ14. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com IRLZ14 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configurati...
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MMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 8.4 3.5 6.0 Single 0.20 FEATURES • Dynamic dV/dt rating • Logic-level gate drive Available • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature Available • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.