S503TX/S503TXR/S503TXRW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Gate 1 - source voltage
Gate 2 - source voltage
Total power dissipation
www.DataShCeheat4nUn.eclotmemperature
Storage temperature range
Tamb ≤ 60 °C
Symbol
VDS
ID
± IG1/G2SM
+ VG1S
- VG1S
± VG2SM
Ptot
TCh
Tstg
Maximum Thermal Resistance
Parameter
Channel ambient
Test condition
1)
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Symbol
RthChA
Value
8
30
10
6
1.5
6
200
150
- 55 to + 150
Value
450
VISHAY
Unit
V
mA
mA
V
V
V
mW
°C
°C
Unit
K/W
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Drain - source breakdown
voltage
ID = 10 µA, VG1S = VG2S = 0
V(BR)DSS
12
Gate 1 - source breakdown
voltage
± IG1S = 10 mA, VG2S = VDS = 0 ± V(BR)G1SS
7
10
Gate 2 - source breakdown
voltage
± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS
7
10
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0
+ IG1SS
20
Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
20
Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V,
IDSO
10
15
20
RG1 = 56 kΩ
Gate 1 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 µA VG1S(OFF)
0.3
1.3
Gate 2 - source cut-off voltage VDS = VRG1 = 5 V, RG1 = 56 kΩ, VG2S(OFF)
0.8
1.0
1.4
ID = 20 µA
Remark on improving intermodulation behavior:
By setting RG1 smaller than 56 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed.
Unit
V
V
V
nA
nA
mA
V
V
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
VDS = 5 V, VG2S = 4 V, ID = 13 mA, f = 1 MHz
Parameter
Test condition
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Symbol
Min
Typ.
Max
Unit
|y21s|
35
40
50 mS
Cissg1
2.3 2.8 pF
Crss 30 40 fF
Coss
1.4
pF
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2
Document Number 85078
Rev. 1.2, 30-Aug-04
