* TrenchFET® Power MOSFET: 1.2 V Rated
* 100 % Rg Tested
* Gate-Source ESD Protected: 1000 V
* Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
* Load/Power Switching for Portable Devices
* Drivers
SI1012CR Datasheet (167.67 KB)
SI1012CR
Vishay ↗ Siliconix
167.67 KB
N-channel mosfet.
N-Channel 20 V (D-S) MOSFET Si1012CR Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.396 at VGS = 4.5 V 0.456 at VGS = 2.5 V 20 0.546 at .
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