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SI1307DL Datasheet

P-Channel 1.8-V (G-S) MOSFET

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P-Channel 1.8 V (G-S) MOSFET
Si1307DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 12
RDS(on) (Ω)
0.290 at VGS = - 4.5 V
0.435 at VGS = - 2.5 V
0.580 at VGS = - 1.8 V
ID (A)
± 0.91
± 0.74
± 0.64
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs: 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC
SOT-323
SC-70 (3-LEADS)
G1
3D
S2
LC XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1307DL-T1-E3 (Lead (Pb)-free)
Si1307DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 12
±8
± 0.91
± 0.85
± 0.72
± 0.68
±3
- 0.28
- 0.24
0.34 0.29
0.22 0.19
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t5s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
315
360
285
Maximum
375
430
340
Unit
°C/W
Document Number: 71077
S10-0721-Rev. B, 29-Mar-10
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1307DL Datasheet

P-Channel 1.8-V (G-S) MOSFET

No Preview Available !

Si1307DL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 8 V
VDS = - 9.6 V, VGS = 0 V
VDS = - 9.6 V, VGS = 0 V, TJ = 70 °C
VDS - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 1 A
VGS = - 2.5 V, ID = - 0.5 A
VGS = - 1.8 V, ID = - 0.3 A
VDS = - 5 V, ID = - 1 A
IS = - 1 A, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 6 V, VGS = - 4.5 V, ID = - 1 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 6 V, RL = 4 Ω
ID - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = - 1 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 0.45
-3
Typ.
0.240
0.350
0.480
3.5
3.2
0.59
0.56
7.5
32
17
11.5
32
Max.
± 100
-1
-5
0.290
0.435
0.580
- 1.2
5
12
45
25
20
52
Unit
V
nA
µA
A
Ω
S
V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
VGS = 4.5 V
6
4V
3.5 V
3V
4
2.5 V
2 2V
1.5 V
0.5 V, 1 V
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
6
TC = - 55 °C
5
25 °C
125 °C
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
www.vishay.com
2
Document Number: 71077
S10-0721-Rev. B, 29-Mar-10


Part Number SI1307DL
Description P-Channel 1.8-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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