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Vishay Intertechnology Electronic Components Datasheet

SI1419DH Datasheet

P-Channel 200-V (D-S) MOSFET

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SI1419DH pdf
P-Channel 200 V (D-S) MOSFET
Si1419DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 200
5.0 at VGS = - 10 V
5.1 at VGS = - 6 V
ID (A)
- 0.38
- 0.37
Qg (Typ.)
4.1
SOT-363
SC-70 (6-LEADS)
D1
D2
G3
6D
5D
4S
Marking Code
BH XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1419DH-T1-E3 (Lead (Pb)-free)
Si1419DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETS
• Small, Thermally Enhanced SC-70 Package
• Ultra Low On-Resistance
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Active Clamp Circuits in dc-to-dc Power Supplies
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 85 °C
L = 0.1 mH
TA = 25 °C
TA = 85 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
- 200
± 20
- 0.38
- 0.3
- 0.27
- 0.22
- 0.5
- 1.3
- 0.83
- 1.9
0.18
1.56 1.0
0.81 0.52
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t5s
Steady State
Steady State
Symbol
RthJA
RthJF
Document Number: 73241
S10-0646-Rev. C, 22-Mar-10
Typical
60
100
34
Maximum
80
125
45
Unit
°C/W
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Vishay Intertechnology Electronic Components Datasheet

SI1419DH Datasheet

P-Channel 200-V (D-S) MOSFET

No Preview Available !

SI1419DH pdf
Si1419DH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = VGS, ID = - 100 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 200 V, VGS = 0 V
VDS = - 200 V, VGS = 0 V, TJ = 85 °C
VDS = - 15 V, VGS = - 10 V
VGS = - 10 V, ID = - 0.4 A
VGS = - 6 V, ID = - 0.4 A
VDS = - 10 V, ID = - 0.4 A
IS = - 0.4 A, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 100 V, VGS = - 10 V, ID = - 0.4 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1.0 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 100 V, RL = 100 Ω
ID - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Fall Time
tf
Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
IF = - 0.4 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 2.5
- 0.5
Typ.
Max.
- 4.5
± 100
-1
-5
3.98
4.06
1.0
- 0.80
5.0
5.1
- 1.1
4.1 6.2
0.8
1.3
17
69
12 18
12 18
12 18
55 83
130 200
Unit
V
nA
µA
A
Ω
S
V
nC
Ω
ns
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.5 0.5
VGS = 10 V thru 5 V
0.4
0.4
0.3 0.3
0.2 0.2
4V
0.1 0.1
0.0
0
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2468
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
0.0
0
TC = 125 °C
25 °C
- 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
Document Number: 73241
S10-0646-Rev. C, 22-Mar-10


Part Number SI1419DH
Description P-Channel 200-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 6 Pages
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